Nambari ya Sehemu :
IXFN50N120SK
Teknolojia :
SiC (Silicon Carbide Junction Transistor)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
48A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
20V
Njia ya Kutumia (Max) @ Id, Vgs :
52 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.8V @ 10mA
Malango ya Lango (Qg) (Max) @ Vgs :
115nC @ 20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1895pF @ 1000V
Joto la Kufanya kazi :
-40°C ~ 175°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-227B
Kifurushi / Kesi :
SOT-227-4, miniBLOC