DMT3011LDT-7 Bei (USD) [231556pcs Hisa]
- 1 pcs$0.15973
- 3,000 pcs$0.14194
- Nambari ya Sehemu:
- DMT3011LDT-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 30V 8A V-DFN3030-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMT3011LDT-7 electronic components. DMT3011LDT-7 can be shipped within 24 hours after order. If you have any demands for DMT3011LDT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT3011LDT-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMT3011LDT-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 30V 8A V-DFN3030-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Asymmetrical
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A, 10.7A
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
13.2nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
641pF @ 15V
Nguvu - Max :
1.9W
Joto la Kufanya kazi :
-55°C ~ 155°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-VDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
V-DFN3030-8 (Type K)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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