Taiwan Semiconductor Corporation - TSM085N03PQ33 RGG

KEY Part #: K6409665

TSM085N03PQ33 RGG Bei (USD) [507441pcs Hisa]

  • 1 pcs$0.07289

Nambari ya Sehemu:
TSM085N03PQ33 RGG
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET N-CH 30V 52A 8PDFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM085N03PQ33 RGG Sifa za Bidhaa

Nambari ya Sehemu : TSM085N03PQ33 RGG
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET N-CH 30V 52A 8PDFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 52A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 8.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14.3nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 817pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 37W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-PDFN (3x3)
Kifurushi / Kesi : 8-PowerWDFN