Nambari ya Sehemu :
FDD86102
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 100V 8A DPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Ta), 36A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
24 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1035pF @ 50V
Kuondoa Nguvu (Max) :
3.1W (Ta), 62W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-PAK (TO-252)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63