DRA5123J0L Bei (USD) [1104409pcs Hisa]
- 1 pcs$0.03349
- 3,000 pcs$0.02940
- 6,000 pcs$0.02646
- 15,000 pcs$0.02352
- 30,000 pcs$0.02205
- 75,000 pcs$0.01960
- Nambari ya Sehemu:
- DRA5123J0L
- Mzalishaji:
- Panasonic Electronic Components
- Maelezo ya kina:
- TRANS PREBIAS PNP 150MW SMINI3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Panasonic Electronic Components DRA5123J0L electronic components. DRA5123J0L can be shipped within 24 hours after order. If you have any demands for DRA5123J0L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DRA5123J0L Sifa za Bidhaa
Nambari ya Sehemu :
DRA5123J0L
Mzalishaji :
Panasonic Electronic Components
Maelezo :
TRANS PREBIAS PNP 150MW SMINI3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
2.2 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
150mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SC-85
Kifurushi cha Kifaa cha Mtoaji :
SMini3-F2-B
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