DRA2L14Y0L Bei (USD) [1378761pcs Hisa]
- 1 pcs$0.02683
- 3,000 pcs$0.02608
- 6,000 pcs$0.02347
- 15,000 pcs$0.02086
- 30,000 pcs$0.01956
- 75,000 pcs$0.01739
- Nambari ya Sehemu:
- DRA2L14Y0L
- Mzalishaji:
- Panasonic Electronic Components
- Maelezo ya kina:
- TRANS PREBIAS PNP 200MW MINI3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu, Viwango - Zener - Moja and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Panasonic Electronic Components DRA2L14Y0L electronic components. DRA2L14Y0L can be shipped within 24 hours after order. If you have any demands for DRA2L14Y0L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DRA2L14Y0L Sifa za Bidhaa
Nambari ya Sehemu :
DRA2L14Y0L
Mzalishaji :
Panasonic Electronic Components
Maelezo :
TRANS PREBIAS PNP 200MW MINI3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
30V
Upinzani - Msingi (R1) :
10 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
1.2V @ 330µA, 50mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
200mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
Mini3-G3-B
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