Vishay Siliconix - SISS98DN-T1-GE3

KEY Part #: K6420336

SISS98DN-T1-GE3 Bei (USD) [183655pcs Hisa]

  • 1 pcs$0.20140
  • 3,000 pcs$0.18912

Nambari ya Sehemu:
SISS98DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 200V 14.1A 1212-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SISS98DN-T1-GE3 electronic components. SISS98DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS98DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISS98DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SISS98DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 200V 14.1A 1212-8
Mfululizo : ThunderFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 14.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 7.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 105 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 7.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 608pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 57W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8
Kifurushi / Kesi : PowerPAK® 1212-8