Infineon Technologies - IDP08E65D2XKSA1

KEY Part #: K6441550

IDP08E65D2XKSA1 Bei (USD) [59949pcs Hisa]

  • 1 pcs$0.44737
  • 10 pcs$0.39887
  • 100 pcs$0.29417
  • 500 pcs$0.24302
  • 1,000 pcs$0.19186

Nambari ya Sehemu:
IDP08E65D2XKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
DIODE GEN PURP 650V 8A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - Kusudi Maalum and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Infineon Technologies IDP08E65D2XKSA1 electronic components. IDP08E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP08E65D2XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDP08E65D2XKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IDP08E65D2XKSA1
Mzalishaji : Infineon Technologies
Maelezo : DIODE GEN PURP 650V 8A TO220-2
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 650V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 2.3V @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 40ns
Sasa - Rejea kuvuja @ Vr : 40µA @ 650V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220-2
Joto la Kufanya kazi - Junction : -40°C ~ 175°C

Unaweza pia Kuvutiwa Na
  • CDBDSC8650-G

    Comchip Technology

    DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 8A 650V

  • CDBDSC10650-G

    Comchip Technology

    DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V

  • VS-8EWS10STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A DPAK.

  • VS-8EWS10STRRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A DPAK.

  • VS-CPU6006L-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 2x30A FRED Pt TO-247 LL 3L

  • VS-E4PH3006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 30A FRED Pt TO-247 LL 2L