IXYS - IXTP18P10T

KEY Part #: K6394685

IXTP18P10T Bei (USD) [50279pcs Hisa]

  • 1 pcs$0.89473
  • 10 pcs$0.80777
  • 100 pcs$0.64910
  • 500 pcs$0.50486
  • 1,000 pcs$0.41831

Nambari ya Sehemu:
IXTP18P10T
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET P-CH 100V 18A TO-220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Viwango - RF and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in IXYS IXTP18P10T electronic components. IXTP18P10T can be shipped within 24 hours after order. If you have any demands for IXTP18P10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP18P10T Sifa za Bidhaa

Nambari ya Sehemu : IXTP18P10T
Mzalishaji : IXYS
Maelezo : MOSFET P-CH 100V 18A TO-220
Mfululizo : TrenchP™
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±15V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2100pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3