Diodes Incorporated - DMN1008UFDF-13

KEY Part #: K6416392

DMN1008UFDF-13 Bei (USD) [667962pcs Hisa]

  • 1 pcs$0.05537

Nambari ya Sehemu:
DMN1008UFDF-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH30V SC-59.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN1008UFDF-13 electronic components. DMN1008UFDF-13 can be shipped within 24 hours after order. If you have any demands for DMN1008UFDF-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1008UFDF-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN1008UFDF-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH30V SC-59
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 8 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 23.4nC @ 8V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 995pF @ 6V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : U-DFN2020-6 (Type F)
Kifurushi / Kesi : 6-UDFN Exposed Pad