IXYS - IXTM50N20

KEY Part #: K6400884

[3243pcs Hisa]


    Nambari ya Sehemu:
    IXTM50N20
    Mzalishaji:
    IXYS
    Maelezo ya kina:
    POWER MOSFET TO-3.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika and Thyristors - SCR ...
    Faida ya Ushindani:
    We specialize in IXYS IXTM50N20 electronic components. IXTM50N20 can be shipped within 24 hours after order. If you have any demands for IXTM50N20, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTM50N20 Sifa za Bidhaa

    Nambari ya Sehemu : IXTM50N20
    Mzalishaji : IXYS
    Maelezo : POWER MOSFET TO-3
    Mfululizo : GigaMOS™
    Hali ya Sehemu : Last Time Buy
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 200V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 45 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 220nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 4600pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 300W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-204AE
    Kifurushi / Kesi : TO-204AE

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