DMN33D8LDW-13 Bei (USD) [1445909pcs Hisa]
- 1 pcs$0.02558
- 10,000 pcs$0.02297
- Nambari ya Sehemu:
- DMN33D8LDW-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 30V 0.25A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - Rectifiers - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - JFETs, Transistors - FET, MOSFETs - RF and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN33D8LDW-13 electronic components. DMN33D8LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN33D8LDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN33D8LDW-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN33D8LDW-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 30V 0.25A
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
250mA
Njia ya Kutumia (Max) @ Id, Vgs :
2.4 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
1.23nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
48pF @ 5V
Nguvu - Max :
350mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SOT-363
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