Nambari ya Sehemu :
APTM120H29FG
Mzalishaji :
Microsemi Corporation
Maelezo :
MOSFET 4N-CH 1200V 34A SP6
Aina ya FET :
4 N-Channel (H-Bridge)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
34A
Njia ya Kutumia (Max) @ Id, Vgs :
348 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5V @ 5mA
Malango ya Lango (Qg) (Max) @ Vgs :
374nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
10300pF @ 25V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SP6