Nambari ya Sehemu :
IPD95R1K2P7ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 950V 6A TO252
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
950V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 Ohm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 140µA
Malango ya Lango (Qg) (Max) @ Vgs :
15nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
478pF @ 400V
Kuondoa Nguvu (Max) :
52W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63