Vishay Siliconix - SI1026X-T1-GE3

KEY Part #: K6525157

SI1026X-T1-GE3 Bei (USD) [561959pcs Hisa]

  • 1 pcs$0.06582
  • 3,000 pcs$0.05958

Nambari ya Sehemu:
SI1026X-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 60V 0.305A SC89-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - JFETs, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI1026X-T1-GE3 electronic components. SI1026X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1026X-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1026X-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI1026X-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 60V 0.305A SC89-6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 305mA
Njia ya Kutumia (Max) @ Id, Vgs : 1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 30pF @ 25V
Nguvu - Max : 250mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji : SC-89-6

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