IXFX200N10P Bei (USD) [9721pcs Hisa]
- 1 pcs$4.68680
- 30 pcs$4.66349
- Nambari ya Sehemu:
- IXFX200N10P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 100V 200A PLUS247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX200N10P Sifa za Bidhaa
Nambari ya Sehemu :
IXFX200N10P
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 100V 200A PLUS247
Mfululizo :
HiPerFET™, PolarP2™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
200A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Malango ya Lango (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
7600pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
830W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PLUS247™-3
Kifurushi / Kesi :
TO-247-3
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