ISSI, Integrated Silicon Solution Inc - IS43DR16640C-3DBI

KEY Part #: K937458

IS43DR16640C-3DBI Bei (USD) [16954pcs Hisa]

  • 1 pcs$2.70259

Nambari ya Sehemu:
IS43DR16640C-3DBI
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 1G PARALLEL 333MHZ. DRAM 1G 64Mx16 333MHz DDR2 1.8V
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Linear - Amplifiers - Amps za Video na Moduli, PMIC - V / F na waongofu wa F / V, Saa / Saa - Batri za IC, PMIC - Chaja za Batri, Maingiliano - Telecom, PMIC - Usimamizi wa Batri, Upataji wa data - Kidhibiti cha Skrini ya Kugusa and Linear - Watengenezaji ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43DR16640C-3DBI electronic components. IS43DR16640C-3DBI can be shipped within 24 hours after order. If you have any demands for IS43DR16640C-3DBI, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43DR16640C-3DBI Sifa za Bidhaa

Nambari ya Sehemu : IS43DR16640C-3DBI
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 1G PARALLEL 333MHZ
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 1Gb (64M x 16)
Usafirishaji wa Saa : 333MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 450ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 84-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 84-TFBGA (12.5x8)

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