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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl
  5. MUN5132DW1T1G

ON Semiconductor - MUN5132DW1T1G

KEY Part #: K6528838

MUN5132DW1T1G Bei (USD) [2100659pcs Hisa]

  • 1 pcs$0.01761
  • 15,000 pcs$0.01454
Nambari ya Sehemu:
MUN5132DW1T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS 2PNP PREBIAS 0.25W SC88.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in ON Semiconductor MUN5132DW1T1G electronic components. MUN5132DW1T1G can be shipped within 24 hours after order. If you have any demands for MUN5132DW1T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MUN5132DW1T1G Sifa za Bidhaa

Nambari ya Sehemu : MUN5132DW1T1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS 2PNP PREBIAS 0.25W SC88
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : 4.7 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 15 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SC-88/SC70-6/SOT-363

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