Nambari ya Sehemu :
IPB120P04P4L03ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH 40V 120A TO263-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 340µA
Malango ya Lango (Qg) (Max) @ Vgs :
234nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
15000pF @ 25V
Kuondoa Nguvu (Max) :
136W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263AB)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB