SI4477DY-T1-GE3 Bei (USD) [135773pcs Hisa]
- 1 pcs$0.27242
- 2,500 pcs$0.25581
- Nambari ya Sehemu:
- SI4477DY-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 26.6A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4477DY-T1-GE3 electronic components. SI4477DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4477DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4477DY-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4477DY-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 26.6A 8-SOIC
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
26.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
6.2 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4600pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3W (Ta), 6.6W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
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