STMicroelectronics - STB25NM60N

KEY Part #: K6415806

[12283pcs Hisa]


    Nambari ya Sehemu:
    STB25NM60N
    Mzalishaji:
    STMicroelectronics
    Maelezo ya kina:
    MOSFET N-CH 600V 21A D2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Transistors - JFETs, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moja and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in STMicroelectronics STB25NM60N electronic components. STB25NM60N can be shipped within 24 hours after order. If you have any demands for STB25NM60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STB25NM60N Sifa za Bidhaa

    Nambari ya Sehemu : STB25NM60N
    Mzalishaji : STMicroelectronics
    Maelezo : MOSFET N-CH 600V 21A D2PAK
    Mfululizo : MDmesh™ II
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 160 mOhm @ 10.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 84nC @ 10V
    Vgs (Max) : ±25V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 2400pF @ 50V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 160W (Tc)
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D2PAK
    Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB