ON Semiconductor - FQPF9N25CYDTU

KEY Part #: K6419256

FQPF9N25CYDTU Bei (USD) [99980pcs Hisa]

  • 1 pcs$0.39304
  • 800 pcs$0.39109

Nambari ya Sehemu:
FQPF9N25CYDTU
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 250V 8.8A TO-220F.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli, Thyristors - SCR and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQPF9N25CYDTU Sifa za Bidhaa

Nambari ya Sehemu : FQPF9N25CYDTU
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 250V 8.8A TO-220F
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 430 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 710pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 38W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220F-3 (Y-Forming)
Kifurushi / Kesi : TO-220-3 Full Pack, Formed Leads