Vishay Siliconix - SIHP30N60E-E3

KEY Part #: K6399609

SIHP30N60E-E3 Bei (USD) [14126pcs Hisa]

  • 1 pcs$2.91743

Nambari ya Sehemu:
SIHP30N60E-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 600V 29A TO220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIHP30N60E-E3 electronic components. SIHP30N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHP30N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP30N60E-E3 Sifa za Bidhaa

Nambari ya Sehemu : SIHP30N60E-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 600V 29A TO220AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 29A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 125 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2600pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 250W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3

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