Nambari ya Sehemu :
VS-GT300YH120N
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 341A 1042W DIAP
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
341A
Vce (on) (Max) @ Vge, Ic :
2.17V @ 15V, 300A (Typ)
Sasa - Ushuru Mtoaji :
300µA
Uingilivu Ufungaji (Wakuu) @ Vce :
36nF @ 30V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Double INT-A-PAK (3 + 8)
Kifurushi cha Kifaa cha Mtoaji :
Double INT-A-PAK