Vishay Semiconductor Diodes Division - VS-GA200HS60S1

KEY Part #: K6533468

[823pcs Hisa]


    Nambari ya Sehemu:
    VS-GA200HS60S1
    Mzalishaji:
    Vishay Semiconductor Diodes Division
    Maelezo ya kina:
    IGBT 600V 480A 830W.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Bipolar (BJT) - RF ...
    Faida ya Ushindani:
    We specialize in Vishay Semiconductor Diodes Division VS-GA200HS60S1 electronic components. VS-GA200HS60S1 can be shipped within 24 hours after order. If you have any demands for VS-GA200HS60S1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GA200HS60S1 Sifa za Bidhaa

    Nambari ya Sehemu : VS-GA200HS60S1
    Mzalishaji : Vishay Semiconductor Diodes Division
    Maelezo : IGBT 600V 480A 830W
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : -
    Usanidi : Half Bridge
    Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
    Sasa - Mtoza (Ic) (Max) : 480A
    Nguvu - Max : 830W
    Vce (on) (Max) @ Vge, Ic : 1.21V @ 15V, 200A
    Sasa - Ushuru Mtoaji : 1mA
    Uingilivu Ufungaji (Wakuu) @ Vce : 32.5nF @ 30V
    Uingizaji : Standard
    Mtaalam wa NTC : No
    Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
    Aina ya Kuinua : Chassis Mount
    Kifurushi / Kesi : INT-A-Pak
    Kifurushi cha Kifaa cha Mtoaji : INT-A-PAK

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