SI4823DY-T1-GE3 Bei (USD) [344842pcs Hisa]
- 1 pcs$0.10726
- 2,500 pcs$0.10093
- Nambari ya Sehemu:
- SI4823DY-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 4.1A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4823DY-T1-GE3 electronic components. SI4823DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4823DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4823DY-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4823DY-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 4.1A 8-SOIC
Mfululizo :
LITTLE FOOT®
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
108 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
660pF @ 10V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
1.7W (Ta), 2.8W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
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