ITT Cannon, LLC - 120220-0202

KEY Part #: K7359492

120220-0202 Bei (USD) [779344pcs Hisa]

  • 1 pcs$0.04770
  • 6,800 pcs$0.04746
  • 13,600 pcs$0.04271
  • 34,000 pcs$0.04208
  • 68,000 pcs$0.04113

Nambari ya Sehemu:
120220-0202
Mzalishaji:
ITT Cannon, LLC
Maelezo ya kina:
UNIVERSAL CONTACT 1.8MM SMD. Battery Contacts
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: RF Modulators, Matangazo ya RF, Wapokeaji wa RF, ICF Mdhibiti Nguvu IC, ICF Misc Misc na moduli, Mpokeaji wa RF, Transmitter, na Transceiver kumali, RFID Antennas and Vitu vya RF ...
Faida ya Ushindani:
We specialize in ITT Cannon, LLC 120220-0202 electronic components. 120220-0202 can be shipped within 24 hours after order. If you have any demands for 120220-0202, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0202 Sifa za Bidhaa

Nambari ya Sehemu : 120220-0202
Mzalishaji : ITT Cannon, LLC
Maelezo : UNIVERSAL CONTACT 1.8MM SMD
Mfululizo : -
Hali ya Sehemu : Active
Chapa : Shield Finger, Pre-Loaded
Sura : -
Upana : 0.035" (0.90mm)
Urefu : 0.132" (3.35mm)
Urefu : 0.071" (1.80mm)
Nyenzo : Beryllium Copper
Kupanga : Nickel
Kupanga - Unene : 118.11µin (3.00µm)
Njia ya Kiambatisho : Solder
Joto la Kufanya kazi : -

Unaweza pia Kuvutiwa Na
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.