Diodes Incorporated - DMN2008LFU-7

KEY Part #: K6522197

DMN2008LFU-7 Bei (USD) [333337pcs Hisa]

  • 1 pcs$0.11096
  • 3,000 pcs$0.09860

Nambari ya Sehemu:
DMN2008LFU-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CHA 20V 14.5A DFN2030.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN2008LFU-7 electronic components. DMN2008LFU-7 can be shipped within 24 hours after order. If you have any demands for DMN2008LFU-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2008LFU-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN2008LFU-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CHA 20V 14.5A DFN2030
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 14.5A
Njia ya Kutumia (Max) @ Id, Vgs : 5.4 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250A
Malango ya Lango (Qg) (Max) @ Vgs : 42.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1418pF @ 10V
Nguvu - Max : 1W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-UFDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji : U-DFN2030-6 (Type B)