DMN2008LFU-7 Bei (USD) [333337pcs Hisa]
- 1 pcs$0.11096
- 3,000 pcs$0.09860
- Nambari ya Sehemu:
- DMN2008LFU-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CHA 20V 14.5A DFN2030.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2008LFU-7 electronic components. DMN2008LFU-7 can be shipped within 24 hours after order. If you have any demands for DMN2008LFU-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2008LFU-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2008LFU-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CHA 20V 14.5A DFN2030
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
14.5A
Njia ya Kutumia (Max) @ Id, Vgs :
5.4 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250A
Malango ya Lango (Qg) (Max) @ Vgs :
42.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1418pF @ 10V
Nguvu - Max :
1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-UFDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
U-DFN2030-6 (Type B)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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