Vishay Siliconix - SI2343DS-T1-E3

KEY Part #: K6417537

SI2343DS-T1-E3 Bei (USD) [391925pcs Hisa]

  • 1 pcs$0.09437
  • 3,000 pcs$0.08025

Nambari ya Sehemu:
SI2343DS-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 30V 3.1A SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF, Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - JFETs and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI2343DS-T1-E3 electronic components. SI2343DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2343DS-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2343DS-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI2343DS-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 30V 3.1A SOT23-3
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 53 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 540pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 750mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3

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