Infineon Technologies - IPA030N10N3GXKSA1

KEY Part #: K6417122

IPA030N10N3GXKSA1 Bei (USD) [25396pcs Hisa]

  • 1 pcs$1.62280

Nambari ya Sehemu:
IPA030N10N3GXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 79A TO220-FP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja, Viwango - Zener - Moja, Transistors - IGBTs - Moduli and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA030N10N3GXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPA030N10N3GXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 79A TO220-FP
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 79A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3 mOhm @ 79A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs : 206nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 14800pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 41W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-FP
Kifurushi / Kesi : TO-220-3 Full Pack