Nexperia USA Inc. - PMXB120EPEZ

KEY Part #: K6421533

PMXB120EPEZ Bei (USD) [735924pcs Hisa]

  • 1 pcs$0.05026
  • 5,000 pcs$0.04383

Nambari ya Sehemu:
PMXB120EPEZ
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET P-CH 30V 2.4A 3DFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Thyristors - SCR and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMXB120EPEZ Sifa za Bidhaa

Nambari ya Sehemu : PMXB120EPEZ
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET P-CH 30V 2.4A 3DFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 309pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 400mW (Ta), 8.3W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DFN1010D-3
Kifurushi / Kesi : 3-XDFN Exposed Pad