Nambari ya Sehemu :
ALD212900ASAL
Mzalishaji :
Advanced Linear Devices Inc.
Maelezo :
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Mfululizo :
EPAD®, Zero Threshold™
Aina ya FET :
2 N-Channel (Dual) Matched Pair
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
10.6V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80mA
Njia ya Kutumia (Max) @ Id, Vgs :
14 Ohm
Vgs (th) (Max) @ Id :
10mV @ 20µA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
30pF @ 5V
Joto la Kufanya kazi :
0°C ~ 70°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SOIC