SIB900EDK-T1-GE3 Bei (USD) [414489pcs Hisa]
- 1 pcs$0.08924
- 3,000 pcs$0.08429
- Nambari ya Sehemu:
- SIB900EDK-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 20V 1.5A SC-75-6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Transistors - Kusudi Maalum, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - FET, MOSFETs - RF and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIB900EDK-T1-GE3 electronic components. SIB900EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB900EDK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB900EDK-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIB900EDK-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 20V 1.5A SC-75-6
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.5A
Njia ya Kutumia (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
1.7nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
3.1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SC-75-6L Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-75-6L Dual
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