Diodes Incorporated - DMP1100UCB4-7

KEY Part #: K6405232

DMP1100UCB4-7 Bei (USD) [588888pcs Hisa]

  • 1 pcs$0.06312
  • 3,000 pcs$0.06281

Nambari ya Sehemu:
DMP1100UCB4-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET P-CHA 12V 2.5A WLB0808.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - Zener - Arrays, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP1100UCB4-7 Sifa za Bidhaa

Nambari ya Sehemu : DMP1100UCB4-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET P-CHA 12V 2.5A WLB0808
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.3V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 83 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 820pF @ 6V
Makala ya FET : -
Kuondoa Nguvu (Max) : 670mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : X2-WLB0808-4
Kifurushi / Kesi : 4-UFBGA, WLBGA

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