DMTH8012LPS-13 Bei (USD) [216885pcs Hisa]
- 1 pcs$0.17139
- 2,500 pcs$0.17054
- Nambari ya Sehemu:
- DMTH8012LPS-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 80V 9.5A PWRDI5060-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - JFETs and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMTH8012LPS-13 electronic components. DMTH8012LPS-13 can be shipped within 24 hours after order. If you have any demands for DMTH8012LPS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH8012LPS-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMTH8012LPS-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 80V 9.5A PWRDI5060-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta), 72A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
17 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1949pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.6W (Ta), 136W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI5060-8
Kifurushi / Kesi :
8-PowerTDFN
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