SIHH100N60E-T1-GE3 Bei (USD) [24266pcs Hisa]
- 1 pcs$1.69839
- Nambari ya Sehemu:
- SIHH100N60E-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET E SERIES 600V POWERPAK 8X.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHH100N60E-T1-GE3 electronic components. SIHH100N60E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH100N60E-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHH100N60E-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHH100N60E-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET E SERIES 600V POWERPAK 8X
Mfululizo :
E
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
28A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1850pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
174W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 8 x 8
Kifurushi / Kesi :
8-PowerTDFN
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