Rohm Semiconductor - RS1E350BNTB

KEY Part #: K6394137

RS1E350BNTB Bei (USD) [137196pcs Hisa]

  • 1 pcs$0.29804
  • 2,500 pcs$0.29656

Nambari ya Sehemu:
RS1E350BNTB
Mzalishaji:
Rohm Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 35A 8HSOP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF, Viwango - RF and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Rohm Semiconductor RS1E350BNTB electronic components. RS1E350BNTB can be shipped within 24 hours after order. If you have any demands for RS1E350BNTB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1E350BNTB Sifa za Bidhaa

Nambari ya Sehemu : RS1E350BNTB
Mzalishaji : Rohm Semiconductor
Maelezo : MOSFET N-CH 30V 35A 8HSOP
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.7 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 185nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 7900pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 35W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-HSOP
Kifurushi / Kesi : 8-PowerTDFN

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