Nambari ya Sehemu :
FDD8882
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 30V 55A D-PAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12.6A (Ta), 55A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
11.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
33nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1260pF @ 15V
Kuondoa Nguvu (Max) :
55W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252AA
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63