ON Semiconductor - FDD8882

KEY Part #: K6403573

FDD8882 Bei (USD) [235285pcs Hisa]

  • 1 pcs$0.15799
  • 2,500 pcs$0.15720

Nambari ya Sehemu:
FDD8882
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 55A D-PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - SCR, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDD8882 electronic components. FDD8882 can be shipped within 24 hours after order. If you have any demands for FDD8882, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD8882 Sifa za Bidhaa

Nambari ya Sehemu : FDD8882
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 55A D-PAK
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12.6A (Ta), 55A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 11.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1260pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 55W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252AA
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63