Nambari ya Sehemu :
SI4829DY-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 2A 8-SOIC
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
215 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
210pF @ 10V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
2W (Ta), 3.1W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)