Infineon Technologies - IPP50R190CEXKSA1

KEY Part #: K6417855

IPP50R190CEXKSA1 Bei (USD) [43497pcs Hisa]

  • 1 pcs$0.89891

Nambari ya Sehemu:
IPP50R190CEXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 500V 18.5A PG-TO-220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays and Viwango - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP50R190CEXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPP50R190CEXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 500V 18.5A PG-TO-220
Mfululizo : CoolMOS™ CE
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 13V
Njia ya Kutumia (Max) @ Id, Vgs : 190 mOhm @ 6.2A, 13V
Vgs (th) (Max) @ Id : 3.5V @ 510µA
Malango ya Lango (Qg) (Max) @ Vgs : 47.2nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1137pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 127W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-3
Kifurushi / Kesi : TO-220-3

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