Infineon Technologies - IRG4PH50S-EPBF

KEY Part #: K6424060

IRG4PH50S-EPBF Bei (USD) [9438pcs Hisa]

  • 1 pcs$2.82929
  • 10 pcs$2.54284
  • 100 pcs$2.08350
  • 500 pcs$1.77363
  • 1,000 pcs$1.49584

Nambari ya Sehemu:
IRG4PH50S-EPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 1200V 57A 200W TO247AD.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Infineon Technologies IRG4PH50S-EPBF electronic components. IRG4PH50S-EPBF can be shipped within 24 hours after order. If you have any demands for IRG4PH50S-EPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG4PH50S-EPBF Sifa za Bidhaa

Nambari ya Sehemu : IRG4PH50S-EPBF
Mzalishaji : Infineon Technologies
Maelezo : IGBT 1200V 57A 200W TO247AD
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 57A
Sasa - Mtoza Ushuru (Icm) : 114A
Vce (on) (Max) @ Vge, Ic : 1.7V @ 15V, 33A
Nguvu - Max : 200W
Kubadilisha Nishati : 1.8mJ (on), 19.6mJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 167nC
Td (on / off) @ 25 ° C : 32ns/845ns
Hali ya Uchunguzi : 960V, 33A, 5 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3
Kifurushi cha Kifaa cha Mtoaji : TO-247AD