Nambari ya Sehemu :
GT10J312(Q)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
IGBT 600V 10A 60W TO220SM
Hali ya Sehemu :
Obsolete
Voltage - Kukusanya Emitter Kuvunja (Max) :
600V
Sasa - Mtoza (Ic) (Max) :
10A
Sasa - Mtoza Ushuru (Icm) :
20A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Aina ya Kuingiza :
Standard
Td (on / off) @ 25 ° C :
400ns/400ns
Hali ya Uchunguzi :
300V, 10A, 100 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
200ns
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-220SM