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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDS3572

ON Semiconductor - FDS3572

KEY Part #: K6403351

FDS3572 Bei (USD) [130505pcs Hisa]

  • 1 pcs$0.30269
  • 2,500 pcs$0.30119
Nambari ya Sehemu:
FDS3572
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 80V 8.9A 8SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moja, Viwango - Zener - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDS3572 electronic components. FDS3572 can be shipped within 24 hours after order. If you have any demands for FDS3572, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS3572 Sifa za Bidhaa

Nambari ya Sehemu : FDS3572
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 80V 8.9A 8SOIC
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 16 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1990pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SOIC
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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