SPB04N50C3ATMA1 Bei (USD) [325pcs Hisa]
- 1,000 pcs$0.28752
- Nambari ya Sehemu:
- SPB04N50C3ATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 560V 4.5A TO-263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies SPB04N50C3ATMA1 electronic components. SPB04N50C3ATMA1 can be shipped within 24 hours after order. If you have any demands for SPB04N50C3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB04N50C3ATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
SPB04N50C3ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 560V 4.5A TO-263
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
560V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
950 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
470pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
50W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-3-2
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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