ON Semiconductor - HGT1S10N120BNST

KEY Part #: K6421773

HGT1S10N120BNST Bei (USD) [51869pcs Hisa]

  • 1 pcs$0.96859
  • 800 pcs$0.96377
  • 1,600 pcs$0.81282
  • 2,400 pcs$0.77411

Nambari ya Sehemu:
HGT1S10N120BNST
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 1200V 35A 298W TO263AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Transistors - JFETs, Thyristors - SCRs - Moduli, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGT1S10N120BNST Sifa za Bidhaa

Nambari ya Sehemu : HGT1S10N120BNST
Mzalishaji : ON Semiconductor
Maelezo : IGBT 1200V 35A 298W TO263AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : NPT
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 35A
Sasa - Mtoza Ushuru (Icm) : 80A
Vce (on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Nguvu - Max : 298W
Kubadilisha Nishati : 320µJ (on), 800µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 100nC
Td (on / off) @ 25 ° C : 23ns/165ns
Hali ya Uchunguzi : 960V, 10A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB