Nambari ya Sehemu :
HGT1S10N120BNST
Mzalishaji :
ON Semiconductor
Maelezo :
IGBT 1200V 35A 298W TO263AB
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
35A
Sasa - Mtoza Ushuru (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Kubadilisha Nishati :
320µJ (on), 800µJ (off)
Aina ya Kuingiza :
Standard
Td (on / off) @ 25 ° C :
23ns/165ns
Hali ya Uchunguzi :
960V, 10A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
-
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB