HGT1S10N120BNST Bei (USD) [51869pcs Hisa]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Nambari ya Sehemu:
- HGT1S10N120BNST
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- IGBT 1200V 35A 298W TO263AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Thyristors - SCR, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Moja, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - RF and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Sifa za Bidhaa
Nambari ya Sehemu :
HGT1S10N120BNST
Mzalishaji :
ON Semiconductor
Maelezo :
IGBT 1200V 35A 298W TO263AB
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya IGBT :
NPT
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
35A
Sasa - Mtoza Ushuru (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Nguvu - Max :
298W
Kubadilisha Nishati :
320µJ (on), 800µJ (off)
Aina ya Kuingiza :
Standard
Malango ya Lango :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Hali ya Uchunguzi :
960V, 10A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
-
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
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