Diodes Incorporated - DMN2016LFG-7

KEY Part #: K6523173

DMN2016LFG-7 Bei (USD) [346695pcs Hisa]

  • 1 pcs$0.10669
  • 3,000 pcs$0.05599

Nambari ya Sehemu:
DMN2016LFG-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH 20V 5.2A 8UDFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Arrays, Thyristors - TRIAC, Transistors - IGBTs - Moduli and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN2016LFG-7 electronic components. DMN2016LFG-7 can be shipped within 24 hours after order. If you have any demands for DMN2016LFG-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2016LFG-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN2016LFG-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH 20V 5.2A 8UDFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual) Common Drain
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.2A
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 16nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1472pF @ 10V
Nguvu - Max : 770mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerUDFN
Kifurushi cha Kifaa cha Mtoaji : U-DFN3030-8

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