Infineon Technologies - IRLZ34NSTRLPBF

KEY Part #: K6417653

IRLZ34NSTRLPBF Bei (USD) [137935pcs Hisa]

  • 1 pcs$0.26815
  • 800 pcs$0.25739

Nambari ya Sehemu:
IRLZ34NSTRLPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 55V 30A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLZ34NSTRLPBF Sifa za Bidhaa

Nambari ya Sehemu : IRLZ34NSTRLPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 55V 30A D2PAK
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 35 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 25nC @ 5V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 880pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.8W (Ta), 68W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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