Microsemi Corporation - APT26F120B2

KEY Part #: K6394530

APT26F120B2 Bei (USD) [4091pcs Hisa]

  • 1 pcs$11.70545
  • 30 pcs$11.64721

Nambari ya Sehemu:
APT26F120B2
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET N-CH 1200V 27A T-MAX.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Transistors - JFETs, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT26F120B2 Sifa za Bidhaa

Nambari ya Sehemu : APT26F120B2
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET N-CH 1200V 27A T-MAX
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 27A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 650 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 9670pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1135W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : T-MAX™
Kifurushi / Kesi : TO-247-3 Variant