NXP USA Inc. - PMDPB56XN,115

KEY Part #: K6523771

[4054pcs Hisa]


    Nambari ya Sehemu:
    PMDPB56XN,115
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET 2N-CH 30V 3.1A HUSON6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PMDPB56XN,115 electronic components. PMDPB56XN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB56XN,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMDPB56XN,115 Sifa za Bidhaa

    Nambari ya Sehemu : PMDPB56XN,115
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET 2N-CH 30V 3.1A HUSON6
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.1A
    Njia ya Kutumia (Max) @ Id, Vgs : 73 mOhm @ 3.1A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 2.9nC @ 4.5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 170pF @ 15V
    Nguvu - Max : 510mW
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 6-UDFN Exposed Pad
    Kifurushi cha Kifaa cha Mtoaji : DFN2020-6

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