Infineon Technologies - IPDD60R125G7XTMA1

KEY Part #: K6417757

IPDD60R125G7XTMA1 Bei (USD) [40573pcs Hisa]

  • 1 pcs$0.96369

Nambari ya Sehemu:
IPDD60R125G7XTMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET NCH 650V 54A PG-HDSOP-10.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPDD60R125G7XTMA1 electronic components. IPDD60R125G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R125G7XTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPDD60R125G7XTMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPDD60R125G7XTMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET NCH 650V 54A PG-HDSOP-10
Mfululizo : CoolMOS™ G7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 125 mOhm @ 6.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 320µA
Malango ya Lango (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1080pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 120W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-HDSOP-10-1
Kifurushi / Kesi : 10-PowerSOP Module

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